发明名称 APPARATUS FOR GROWING SINGLE CRYSTAL INGOT
摘要 PURPOSE: An apparatus for growing a single crystal ingot is provided to prevent heat from a crucible from being delivered to the end part of a water cooling tube by including a heat insulator which is arranged to surround around the end part of the water cooling tube. CONSTITUTION: A chamber(110) has an accommodation space inside. A crucible(120) is arranged in the chamber and accepts a silicon solution. A heating element(130) is arranged around the crucible and heats the crucible. A water cooling tube(140) cools an ingot which is grown up from the silicon solution. A heat insulator(150) blocks the heat from the crucible not to be delivered to the end part of the water cooling tube.
申请公布号 KR20120000199(A) 申请公布日期 2012.01.02
申请号 KR20100060407 申请日期 2010.06.25
申请人 LG SILTRON INCORPORATED 发明人 LEE SHIUH LIANG;CHO, HYON JONG
分类号 C30B15/00;C30B29/06;H01L21/02 主分类号 C30B15/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利