发明名称 |
APPARATUS FOR GROWING SINGLE CRYSTAL INGOT |
摘要 |
PURPOSE: An apparatus for growing a single crystal ingot is provided to prevent heat from a crucible from being delivered to the end part of a water cooling tube by including a heat insulator which is arranged to surround around the end part of the water cooling tube. CONSTITUTION: A chamber(110) has an accommodation space inside. A crucible(120) is arranged in the chamber and accepts a silicon solution. A heating element(130) is arranged around the crucible and heats the crucible. A water cooling tube(140) cools an ingot which is grown up from the silicon solution. A heat insulator(150) blocks the heat from the crucible not to be delivered to the end part of the water cooling tube.
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申请公布号 |
KR20120000199(A) |
申请公布日期 |
2012.01.02 |
申请号 |
KR20100060407 |
申请日期 |
2010.06.25 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
LEE SHIUH LIANG;CHO, HYON JONG |
分类号 |
C30B15/00;C30B29/06;H01L21/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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