METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of a semiconductor device by eliminating an interference effect between word lines. CONSTITUTION: A plurality of gate patterns(130) is formed on a substrate(100). A gate pattern comprises a first conductive layer pattern(110), a blocking insulating layer(115), a second conductive layer pattern(120), and a capping insulating layer(125). A first insulation layer(140), which fills a space between the gate pattern, is formed. The first insulation layer is etched to a predetermined depth. A second insulation layer(150) is formed on the gate patterns and the first insulation layer. A low dielectric material(160) is formed between the gate patterns.