发明名称 |
METHOD FOR PRODUCING SILICON EPITAXIAL WAFER |
摘要 |
<p>The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step.</p> |
申请公布号 |
KR20120000578(A) |
申请公布日期 |
2012.01.02 |
申请号 |
KR20117026721 |
申请日期 |
2010.04.12 |
申请人 |
SUMCO CORPORATION |
发明人 |
OKUUCHI SHIGERU;OGATA SHINICHI |
分类号 |
H01L21/20;B24B37/04;H01L21/304 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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