MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE FORMED BY THE SAME

摘要

PURPOSE: A manufacturing method of a nitride semiconductor light emitting device and the nitride semiconductor light emitting device formed by the same are provided to deposit a reflection metal layer and a barrier metal layer in the p-type semiconductor layer at the same time through one photoresist process. CONSTITUTION: In a manufacturing method of a nitride semiconductor light emitting device and the nitride semiconductor light emitting device formed by the same, a light emitting structure is formed on a substrate(110). The light emitting structure comprises first and second conductive nitride semiconductor layer and an active layer. The active layer is interposed between the first and second conductive nitride semiconductor layer. A first conductive nitride semiconductor layer(120), an active layer(130), and a second conductive nitride semiconductor layer(140) are formed in the top of the substrate. The first electrode is connected to the first conductive nitride semiconductor layer. A photoresist film(150) is formed on the second conductive nitride semiconductor layer. A reflective metal layer(161) and a barrier metal layer(162) are formed on the second conductive nitride semiconductor layer. The photoresist film is removed.