发明名称 Nanometer-scale Engineered Structures, Methods and Apparatus for Fabrication thereof, and Applications to Mask Repair, Enhancement and Fabrication
摘要 Photomask repair and fabrication with use of direct-write nanolithography, including use of scanning probe microscopic tips (e.g., atomic force microscope tips, etc.) for deposition of ink materials including sol-gel inks. Additive methods can be combined with subtractive methods. Holes can be filled with nanostructures. Heights of the nanostructures filling the holes can be controlled without losing control of the lateral dimensions of the nanostructures. Phase shifters on phase shifting masks (PSMs) are additively repaired with selectively deposited sol-gel material that is converted to solid oxide, which has optical transparency and index of refraction adapted for the phase shifters repaired.
申请公布号 KR101101698(B1) 申请公布日期 2011.12.30
申请号 KR20057006817 申请日期 2003.10.21
申请人 发明人
分类号 G03F7/00;B82B1/00;B82B3/00;C23C18/14;C23C18/16;C23C18/28;G01Q30/16;G03F1/00;G03F9/00;G21K5/00 主分类号 G03F7/00
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