System useful for gas treatment of at least one substrate, comprises reaction chamber, substrate support structure for holding one substrate arranged in reaction chamber, static gas injector, and at least one movable gas injector

摘要

System (100) for gas treatment of at least one substrate (122), comprises: a reaction chamber; at least one substrate support structure for holding at least one substrate arranged in the reaction chamber (102), where at least one substrate support structure (104) is rotatable around a rotational axis (128) of at least one substrate support structure; at least one static gas injector arranged in the reaction chamber over the substrate support structure; and at least one movable gas injector arranged over the substrate support structure. System (100) for gas treatment of at least one substrate (122), comprises: a reaction chamber; at least one substrate support structure for holding at least one substrate arranged in the reaction chamber (102), where at least one substrate support structure (104) is rotatable around a rotational axis (128) of at least one substrate support structure; at least one static gas injector arranged in the reaction chamber over the substrate support structure; and at least one movable gas injector arranged over the substrate support structure, where at least one movable gas injector is movable towards at least one substrate support structure and away from this, and the movable gas injector comprises a drive for movement of at least one movable gas injector movable towards at least one substrate support structure and away from this, and at least one gas outlet port for expelling at least one process gas from at least one movable gas injector. An independent claim is also included for gas treating at least one substrate in a reaction chamber, comprising (i) positioning at least one gas outlet port of at least one movable gas injector on a first point in the reaction chamber by reducing a first separation distance between at least one gas outlet port of at least one movable gas injector and at least one static gas injector, and enlarging a second separation distance between at least one gas outlet port of at least one gas injector and a movable substrate support structure in the reaction chamber, (ii) applying at least one substrate on the substrate support structure, (iii) moving at least one gas outlet port of at least one movable gas injector from the first location to a second location in the reaction chamber by enlarging the first separation distance between at least one gas outlet port of at least one movable gas injector and at least one static gas injector, and reducing the second separation distance between at least one gas outlet port of at least one movable gas injector and at least one substrate support structure, and (iv) expelling at least one process gas from at least one movable injector and at least another different process gas from at least one static gas injector.