发明名称 |
ORGANORUTHENIUM COMPOUND FOR CHEMICAL DEPOSITION AND CHEMICAL DEPOSITION PROCESS USING THE ORGANORUTHENIUM COMPOUND |
摘要 |
PURPOSE: An organoruthenium compound for chemical deposition is provided to ensure relatively high vapor pressure and to ensure proper film formation. CONSTITUTION: An organoruthenium compound for chemical deposition is denoted by chemical formula 1. A chemical deposition of a ruthenium thin film or ruthenium compound thin film comprises a step of vaporizing organic ruthenium compounds of chemical formula 1 for using reaction gar; and a step of introducing reaction gas to the substrate surface and heating. |
申请公布号 |
KR20110140097(A) |
申请公布日期 |
2011.12.30 |
申请号 |
KR20110061023 |
申请日期 |
2011.06.23 |
申请人 |
TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
SAITO MASAYUKI;SUZUKI KAZUHARU;NABEYA SHUNICHI |
分类号 |
C07F15/00;C23C16/18;C23C16/44 |
主分类号 |
C07F15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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