发明名称 ORGANORUTHENIUM COMPOUND FOR CHEMICAL DEPOSITION AND CHEMICAL DEPOSITION PROCESS USING THE ORGANORUTHENIUM COMPOUND
摘要 PURPOSE: An organoruthenium compound for chemical deposition is provided to ensure relatively high vapor pressure and to ensure proper film formation. CONSTITUTION: An organoruthenium compound for chemical deposition is denoted by chemical formula 1. A chemical deposition of a ruthenium thin film or ruthenium compound thin film comprises a step of vaporizing organic ruthenium compounds of chemical formula 1 for using reaction gar; and a step of introducing reaction gas to the substrate surface and heating.
申请公布号 KR20110140097(A) 申请公布日期 2011.12.30
申请号 KR20110061023 申请日期 2011.06.23
申请人 TANAKA KIKINZOKU KOGYO K.K. 发明人 SAITO MASAYUKI;SUZUKI KAZUHARU;NABEYA SHUNICHI
分类号 C07F15/00;C23C16/18;C23C16/44 主分类号 C07F15/00
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