| 摘要 |
The present invention relates to a method and equipment for production of high purity silicon by reduction of SiCIwith molten Zn metal. The method is characterized in that the reduction takes place in contact with a molten salt that dissolves ZnCI. The ZnCIproduced during the reduction then dissolves in the molten salt rather than evaporates. The advantage is that gas evolution during the reduction is minimised, leading to higher utilisation of the SiCIand Zn and thereby a higher Si yield. Another advantage is that the molten salt efficiently protects the air sensitive materials, Zn, SiCIand Si, from oxidation during the reduction. The resulting molten salt containing the ZnCIcan be used for electrolysis of ZnCIto regenerate the Zn metal. Chlorine evolved during the electrolysis can be used to produce SiCI. |
