MOS DEVIDE STRUCTURE FOR PREVENTING FLOATING BODY EFFECT AND SELF-HEATING EFFECT AND MANUFACTURING METHOD THEREOF

摘要

A MOS device structure for preventing floating body effect and self-heating effect and the manufacturing method thereof are provided. The MOS device structure comprises a Si substrate (1) and an active area including a channel area (31) and the source/drain areas (32, 33) located on both ends thereof on the Si substrate (1), a gate electrode (41) disposed on the channel (31), an buried insulation layer (51) disposed between the source/drain areas (32, 33) and the Si substrate (1) respectively, a SiGe isolation layer disposed between the channel (31) and the Si substrate (1). Such structure could prevent the device from floating body effect and self-heating effect, and reduce parasitic capacitance between the source and the drain.