| 摘要 |
A method for manufacturing a photoelectric conversion element and a photoelectric conversion element manufactured by the manufacturing method. The method includes the steps of forming a p-type impurity diffusion layer by diffusing boron into a silicon substrate, forming an oxidation control mask on a surface of the p-type impurity diffusion layer in an area corresponding to an area where an electrode for p-type is to be formed, forming a thermal silicon oxide film on the surface of the p-type impurity diffusion layer, exposing part of the surface of the p-type impurity diffusion layer by removing the oxidation control mask formed on the surface of the p-type impurity diffusion layer in the area corresponding to the area where the electrode for p-type is to be formed, and forming the electrode for p-type on the part of the surface of the p-type impurity diffusion layer exposed by the removal of the oxidation control mask.
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