发明名称 |
STORAGE ELEMENT AND STORAGE DEVICE |
摘要 |
A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer. |
申请公布号 |
US2011316102(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113116755 |
申请日期 |
2011.05.26 |
申请人 |
OHMORI HIROYUKI;HOSOMI MASANORI;BESSHO KAZUHIRO;HIGO YUTAKA;YAMANE KAZUTAKA;UCHIDA HIROYUKI;SONY CORPORATION |
发明人 |
OHMORI HIROYUKI;HOSOMI MASANORI;BESSHO KAZUHIRO;HIGO YUTAKA;YAMANE KAZUTAKA;UCHIDA HIROYUKI |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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