发明名称 |
Multilayered Semiconductor Wafer and Process For Manufacturing The Same |
摘要 |
Silicon carbide substrate wafers are prepared by transferring a monocrystalline silicon layer from a donor wafer onto a handle wafer, the silicon layer being implanted with carbon and annealed to form a monocrystalline SiC layer prior to or after transfer of the silicon layer. |
申请公布号 |
US2011316003(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113225826 |
申请日期 |
2011.09.06 |
申请人 |
MURPHY BRIAN;WAHLICH REINHOLD;SILTRONIC AG |
发明人 |
MURPHY BRIAN;WAHLICH REINHOLD |
分类号 |
H01L29/12;B82Y99/00 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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