MOS DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a metal-oxide-semiconductor (MOS) device structure and a manufacturing method thereof. The MOS device structure includes: a Si substrate (1) and an active region located on the Si substrate (1), the active region including a channel (31) and a source region (32) and a drain region (33) located on both ends of the channel (31); a gate region located above the channel (31), the gate region including a gate dielectric layer (42) and a gate electrode (41); an insulation sidewall isolation structure (43) located around the gate region; an insulation buried layer (51) located between the source region (32), the drain region (33) and both sides of the channel (31) and the Si substrate (1); a SiGe interlayer (2) located between the central position of the channel (31) and the Si substrate (1). The channel of the MOS device structure can conduct electricity and heat to the Si substrate through the SiGe layer, thus preventing floating body effect and self-heating effect. The insulation buried layer is retained between the source-drain region and both sides of the channel and the Si substrate, thus it can reduce the parasitic capacitance of the source-drain region.