| 摘要 |
An amplification-type solid-state imaging device supplies a voltage of VRESL1 to a gate of a reset transistor when a signal of a vertical output line is read out and supplies a voltage of VRESL2, which is greater than VRESL1, when the signal charge accumulated in a photodiode is transferred to an FD so that, via a capacitor provided between the gate of the reset transistor and the FD, good linearity is obtained by decreasing the voltage of the FD when the signal is read out and the maximum amount of charge which can be transferred is increased by increasing the voltage of the FD when the charge is transferred. |
