ULTRAVIOLET SENSOR AND METHOD FOR MANUFACTURING ULTRAVIOLET SENSOR

摘要

Disclosed is an ultraviolet sensor which comprises: a p-type semiconductor layer (1) that contains a solid solution of NiO and ZnO as a main component; and an n-type semiconductor layer (2) that contains ZnO as a main component and is joined to the p-type semiconductor layer (1) such that a part of the surface of the p-type semiconductor layer (1) is exposed. The p-type semiconductor layer (1) contains trivalent Ni in the crystal grains in the form of a solid solution with the above-described main component. The trivalent Ni can be contained in the crystal grains of the p-type semiconductor layer (1) by adding NiOOH to NiO and ZnO and then firing the resulting mixture. Consequently, there can be obtained a small-sized low-cost ultraviolet sensor which does not require peripheral circuits and is capable of easily sensing the ultraviolet intensity by means of photovoltaic power.