METHOD FOR MANUFACTURING CONTACT OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE WITH CONTACT

摘要

A method for manufacturing a contact of a semiconductor device and the semiconductor device with the contact are provided. The method comprises a contact structure is formed on source/drain regions (210), the bottom of the contact structure has a plurality of contact holes (222) with smaller hole diameters, and the top of the contact structure has trench contacts (228) with larger contact areas. The contact holes (222) with smaller hole diameters and the trench contacts (228) with larger contact areas are facilitated to connect with an upper metal layer, thereby conductive performance of the contact and overall performance of the device are improved.