FILM FORMING METHOD AND FILM FORMING APPARATUS

摘要

Disclosed is a film forming method which comprises: a step wherein a wafer (W) that is provided with an insulating film is arranged within a process chamber (1) of a film forming apparatus (100); a surface modification step wherein a gas of a compound such as TEOS that contains silicon atoms and an OH group-donating gas such as water vapor are supplied into the process chamber (1) so that Si-OH groups are formed on the surface of the insulating film; and a film formation step wherein a film formation gas that contains a manganese-containing material is supplied into the process chamber (1) so that a manganese-containing film is formed on the surface of the insulating film on which the Si-OH groups have been formed by a CVD method. In the surface modification step, the gas of a compound that contains silicon atoms and the OH group-donating gas may be supplied into the process chamber (1) simultaneously or alternately.