INTERLAYER DIELECTRIC LAYER AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE HAVING THE INTERLAYER DIELECTRIC LAYER

摘要

An interlayer dielectric layer and a manufacturing method thereof, and a semiconductor device having the interlayer dielectric layer are provided. A plurality of holes (340) which aren't connected with each other are formed in the interlayer dielectric layer (310) by the method. The holes (340) can be filled with porous low-K dielectric material having lower dielectric constant, or only the upper portion of the holes (340) can be blocked for forming cavities in the interlayer dielectric layer(310). The interlayer dielectric layer (310) with such a structure has a lower dielectric constant, and reduces the RC delay of the device. Because the holes (340) in the interlayer dielectric layer(310) aren't connected with each other, it doesn't cause changes of dielectric constant of dielectric material or short circuit between conducting wires, thereby providing better stability and reliability for the device and improving the performance of the device.