METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

摘要

A step for preparing a laminate (TX) is performed in such a manner that each substrate of a first single crystal substrate group (10a) and a first base substrate (30a) face each other, each substrate of a second single crystal substrate group (10b) and a second base substrate (30b) face each other, and the first single crystal substrate group (10a), the first base substrate (30a), an insertion part (60X), the second single crystal substrate group (10b), and the second base substrate (30b) are stacked in this order in one direction. Next, the laminate (TX) is heated in such a manner that the temperature of the laminate (TX) reaches a temperature at which silicon carbide can sublime and a temperature gradient such that the temperature increases in the one direction within the laminate (TX) is formed. Consequently, a silicon carbide substrate (81) can be efficiently manufactured.