发明名称 Data Programming Circuits and Memory Programming Methods
摘要 A data programming circuit for storing a writing data into a memory cell is provided. The data programming circuit includes a control circuit and a current generating circuit. The control circuit generates a control signal according to the writing data. The current generating circuit provides a writing current to the memory cell to change a crystalline state of the memory cell. The writing current has a pulse width corresponding to the writing data, and the crystalline state corresponds to the writing data.
申请公布号 US2011317483(A1) 申请公布日期 2011.12.29
申请号 US201113215491 申请日期 2011.08.23
申请人 SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA;LIN WEN-PIN;NANYA TECHNOLOGY CORPORATION 发明人 SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA;LIN WEN-PIN
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址