发明名称 |
Data Programming Circuits and Memory Programming Methods |
摘要 |
A data programming circuit for storing a writing data into a memory cell is provided. The data programming circuit includes a control circuit and a current generating circuit. The control circuit generates a control signal according to the writing data. The current generating circuit provides a writing current to the memory cell to change a crystalline state of the memory cell. The writing current has a pulse width corresponding to the writing data, and the crystalline state corresponds to the writing data. |
申请公布号 |
US2011317483(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113215491 |
申请日期 |
2011.08.23 |
申请人 |
SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA;LIN WEN-PIN;NANYA TECHNOLOGY CORPORATION |
发明人 |
SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA;LIN WEN-PIN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|