发明名称 |
Shallow Junction Formation and High Dopant Activation Rate of MOS Devices |
摘要 |
A semiconductor structure comprises a gate stack in a semiconductor substrate and a lightly doped source/drain (LDD) region in the semiconductor substrate. The LDD region is adjacent to a region underlying the gate stack. The LDD region comprises carbon and an n-type impurity, and the n-type impurity comprises phosphorus tetramer. |
申请公布号 |
US2011316079(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113228182 |
申请日期 |
2011.09.08 |
申请人 |
NIEH CHUN-FENG;KU KEH-CHIANG;CHENG NAI-HAN;CHEN CHI-CHUN;LIN LI-TE S.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
NIEH CHUN-FENG;KU KEH-CHIANG;CHENG NAI-HAN;CHEN CHI-CHUN;LIN LI-TE S. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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