| 摘要 |
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a tunnel insulating film, a first electrode, an interelectrode insulating film and a second electrode. The tunnel insulating film is provided on the semiconductor substrate. The first electrode is provided on the tunnel insulating film. The interelectrode insulating film is provided on the first electrode. The second electrode is provided on the interelectrode insulating film. The interelectrode insulating film includes a stacked insulating layer, a charge storage layer and a block insulating layer. The charge storage layer is provided on the stacked insulating layer. The block insulating layer is provided on the charge storage layer. The stacked insulating layer includes a first insulating layer, a quantum effect layer and a second insulating layer. The quantum effect layer is provided on the first insulating layer. The second insulating layer is provided on the quantum effect layer. |
