| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device having a shared contact for connection between a source/drain region and a gate electrode. After formation of a gate electrode via a gate insulating film on a semiconductor substrate, a top surface of the substrate is covered with a cover film. After removal of the cover film from at least one of sidewall surface of the gate electrode and a part of the top surface of the substrate adjacent to the sidewall surface, a semiconductor layer is epitaxially grown on a top surface of an exposed substrate to electrically connect the substrate and the at least one sidewall surface of the gate electrode. Then, a source/drain region is formed in a top surface part of the substrate or the semiconductor layer using the gate electrode as a mask. |
