发明名称 |
NANOWIRE FET WITH TRAPEZOID GATE STRUCTURE |
摘要 |
In one embodiment, a method of providing a nanowire semiconductor device is provided, in which the gate structure to the nanowire semiconductor device has a trapezoid shape. The method may include forming a trapezoid gate structure surrounding at least a portion of a circumference of a nanowire. The first portion of the trapezoid gate structure that is in direct contact with an upper surface of the nanowire has a first width and a second portion of the trapezoid gate structure that is in direct contact with a lower surface of the nanowire has a second width. The second width of the trapezoid gate structure is greater than the first width of the trapezoid gate structure. The exposed portions of the nanowire that are adjacent to the portion of the nanowire that the trapezoid gate structure is surrounding are then doped to provide source and drain regions. |
申请公布号 |
US2011315950(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US20100824293 |
申请日期 |
2010.06.28 |
申请人 |
SLEIGHT JEFFREY W.;BANGSARUNTIP SARUNYA;ENGELMANN SEBASTIAN U.;ZHANG YING;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SLEIGHT JEFFREY W.;BANGSARUNTIP SARUNYA;ENGELMANN SEBASTIAN U.;ZHANG YING |
分类号 |
H01L29/775;H01L21/335 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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