EFFICIENT HEAT SHIELD FOR SILICON SINGLE CRYSTAL FURNACE

摘要

An efficient heat shield for silicon single crystal furnace is disclosed, which comprises an outer layer (1) of the heat shield, an inner layer (2) of the heat shield, a thermoelectric battery module (4), a cool source module (5) and heat insulating materials (3). The thermoelectric battery module (4), at the other side of which the cool source module (5) is located, is provided attaching to the inner layer (2) of the heat shield. The space between the cool source module (5) and the outer layer (1) is filled with the heat insulating materials (3). During the pulling of single crystal, the surface temperature of the inner layer (2), as a hot source of the thermoelectric battery module (4), is generally above 500?, and the cool source module (5) is used as cool source of the thermoelectric battery module (4). The heat is conducted from the high temperature zone to the low temperature zone so that exhausted heat can be reused after being partly converted into electrical power by the thermoelectric battery module (4). Meanwhile, the surface temperature at the inner side of the heat shield is decreased under the action of the cool source module (5), thereby contributing to the increase of longitudinal temperature gradient within the crystal and then to the increase of crystal growth speed.