SEMICONDUCTOR DEVICE, LIQUID CRYSTAL DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

Provided is an electrode layer that does not delaminate from oxide semiconductors and oxide insulating films, and that does not cause any diffusion of copper atoms on oxide semiconductors and into oxide semiconductors nor any extraction of oxygen therefrom. The disclosed oxygen-diffusion-preventing thin film (37) is in contact with an oxide semiconductor layer (34), includes copper as the principal component thereof, and contains copper oxide so as to reduce the difference in oxygen concentration at the interface between the oxide semiconductor layer (34) and the oxygen-diffusion-preventing thin film (37). A laminated electrode layer (40) is made by forming, on the oxygen-diffusion-preventing thin film (37), a highly electroconductive thin film (38) that contains copper and that has high electrical conductivity and low resistance. Because the highly electroconductive thin film (38) having a high copper content is not in direct contact with the oxide semiconductor layer (34), neither the diffusion of copper nor the extraction of oxygen occurs.