| 发明名称 |
SEMICONDUCTOR DEVICE WITH GATE-UNDERCUTTING RECESSED REGION |
| 摘要 |
A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure. |
| 申请公布号 |
US2011316089(A1) |
申请公布日期 |
2011.12.29 |
| 申请号 |
US201113229226 |
申请日期 |
2011.09.09 |
| 申请人 |
PACHECO ROTONDARO ANTONIO LUIS;HURD TRACE Q.;KOONTZ ELISABETH MARLEY;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PACHECO ROTONDARO ANTONIO LUIS;HURD TRACE Q.;KOONTZ ELISABETH MARLEY |
| 分类号 |
H01L27/092;H01L29/78 |
主分类号 |
H01L27/092 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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