发明名称 PROCESS FOR PRODUCTION OF BARRIER FILM, AND PROCESS FOR PRODUCTION OF METAL WIRING FILM
摘要 <p>A metal nitride film, which serves as a barrier film, is formed on a substrate having a hole or trench formed therein by a CVD process or an ALD process, and the surface of the metal nitride film is irradiated with a hydrogen plasma or a hydrogen radical while applying a bias voltage to the substrate side of the metal nitride film.</p>
申请公布号 WO2011162255(A1) 申请公布日期 2011.12.29
申请号 WO2011JP64158 申请日期 2011.06.21
申请人 ULVAC, INC.;HARADA, MASAMICHI;OGAWA, YOHEI;KUMAMOTO, SHOICHIRO;YAMAMOTO, AKIKO 发明人 HARADA, MASAMICHI;OGAWA, YOHEI;KUMAMOTO, SHOICHIRO;YAMAMOTO, AKIKO
分类号 C23C16/34;C23C16/06;H01L21/285;H01L21/3205 主分类号 C23C16/34
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