<p>A planar phase change memory cell with parallel electrical paths. The memory cell includes a first conductive electrode region having a length greater than its width and an axis aligned with the length. The memory cell also includes a second conductive electrode region having an edge oriented at an angle to the axis of the first conductive electrode region. The memory cell further includes an insulator region providing a lateral separation distance between an end of the first conductive electrode region and the edge of the second conductive electrode region, the insulator region including at least part of an insulator film and the lateral separation distance is responsive to the thickness of the insulator film.</p>
申请公布号
WO2011161227(A1)
申请公布日期
2011.12.29
申请号
WO2011EP60595
申请日期
2011.06.24
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;KARIDIS, JOHN, PETER;FRANCESCHINI, MICHELE, MARTINO