| 摘要 |
PURPOSE: A method for manufacturing a nitride semiconductor light emitting devices is provided to maximize light emission efficiency by forming an unevenness pattern in one side of a light emitting device without an additional process. CONSTITUTION: In a method for manufacturing a nitride semiconductor light emitting devices, a buffer layer(20) is formed on a substrate(10). A mask layer(30) having a plurality of circular exposure patterns is formed in the buffer layer. A nitride semiconductor(40) of a hexagonal pyramid structure is formed on the plural circular exposure patterns of the mask layer. The planarization nitride semiconductor layer(50) having an even top side is formed on the hexagonal pyramid structure. A radiation lamination structure is formed on the planarization nitride semiconductor layer.
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