发明名称 Semiconductor Device and Method of Fabricating the Same
摘要 A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.
申请公布号 US2011316168(A1) 申请公布日期 2011.12.29
申请号 US20100913748 申请日期 2010.10.27
申请人 MOON KWANG-JIN;KANG PIL-KYU;BAE DAE-LOK;CHOI GIL-HEYUN;PARK BYUNG-LYUL;LIM DONG-CHAN;JUNG DEOK-YOUNG 发明人 MOON KWANG-JIN;KANG PIL-KYU;BAE DAE-LOK;CHOI GIL-HEYUN;PARK BYUNG-LYUL;LIM DONG-CHAN;JUNG DEOK-YOUNG
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
代理机构 代理人
主权项
地址