发明名称 Embedded 3D Interposer Structure
摘要 A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump.
申请公布号 US2011316147(A1) 申请公布日期 2011.12.29
申请号 US20100823851 申请日期 2010.06.25
申请人 SHIH YING-CHING;LIN JING-CHENG;CHIOU WEN-CHIH;JENG SHIN-PUU;YU CHEN-HUA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHIH YING-CHING;LIN JING-CHENG;CHIOU WEN-CHIH;JENG SHIN-PUU;YU CHEN-HUA
分类号 H01L23/488 主分类号 H01L23/488
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