METHOD AND APPARATUS FOR ANALYZING AND / OR REPAIRING OF AN EUV MASK DEFECT
摘要
The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
申请公布号
WO2011161243(A1)
申请公布日期
2011.12.29
申请号
WO2011EP60626
申请日期
2011.06.24
申请人
CARL ZEISS SMS GMBH;CARL ZEISS SMT GMBH;BUDACH, MICHAEL;BRET, TRISTAN;EDINGER, KLAUS;HOFMANN, THORSTEN;FELDMANN, HEIKO;RUOFF, JOHANNES
发明人
BUDACH, MICHAEL;BRET, TRISTAN;EDINGER, KLAUS;HOFMANN, THORSTEN;FELDMANN, HEIKO;RUOFF, JOHANNES