PATTERN FORMATION METHOD AND IMPRINT MATERIAL

摘要

According to one embodiment, a pattern formation method is disclosed. The method can include forming a foundation film on a patterning film. The foundation film includes a reaction initiator to produce at least one of an acid and a base. The method can include forming an imprint film having an uneven configuration by coating an imprint material onto the foundation film and by causing a template to contact the imprint material. The method can include increasing an etching rate of a first portion of the imprint film higher than a second portion by introducing the at least one of acid and base into the first portion. The first portion is on the foundation film side. The second portion is a portion excluding the first portion. The method can include patterning the patterning film using a protruding portion of the uneven configuration as a mask.