发明名称 |
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES |
摘要 |
A first gas for plasma etch and a second gas for plasma deposition are introduced onto a semiconductor substrate, the semiconductor substrate including a mask pattern. A flow rate of the first and second gases is periodically changed within a range of flow rates during a process cycle, such that a plasma etch process and a plasma deposition process are performed together to form an opening in the semiconductor substrate.
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申请公布号 |
US2011318930(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113164090 |
申请日期 |
2011.06.20 |
申请人 |
JEON YONG-HO;KIM DONG-HYUN;HAN JE-WOO;SHIN KYOUNG-SUB;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON YONG-HO;KIM DONG-HYUN;HAN JE-WOO;SHIN KYOUNG-SUB |
分类号 |
H01L21/306;C23F1/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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