发明名称 |
METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL |
摘要 |
The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film compound solar cell before it is separated from the substrate. To separate the thin film compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film compound solar cell. |
申请公布号 |
US2011318866(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113165318 |
申请日期 |
2011.06.21 |
申请人 |
PAN NOREN;HILLIER GLEN;VU DUY PHACH;TATAVARTI RAO;YOUTSEY CHRISTOPHER;MCCALLUM DAVID;MARTIN GENEVIEVE;MICROLINK DEVICES, INC. |
发明人 |
PAN NOREN;HILLIER GLEN;VU DUY PHACH;TATAVARTI RAO;YOUTSEY CHRISTOPHER;MCCALLUM DAVID;MARTIN GENEVIEVE |
分类号 |
H01L31/0232;H01L31/078;H01L31/0304 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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