METHOD FOR MAUFACTURING CONTACT AND SEMICONDUCTOR DEVICE WITH CONTACT

摘要

A method for manufacturing a contact(220) and a semiconductor device with the contact(220) are provided. The method includes the following steps: forming a groove contact(220) with larger size firstly, then forming one or more dielectric layers(226) in the groove contact(220), next, removing a top part of the dielectric layer(226) and filling with conductive material(228). It is easy to form the groove contact(220) with larger size by using this method. This structure is easy to be fabricated. Due to the formation of the dielectric layers(226) in the groove contact(220), a capacitance between a source/drain groove contact and a gate electrode is decreased.