ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES
摘要
<p>A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.</p>
申请公布号
WO2011163186(A1)
申请公布日期
2011.12.29
申请号
WO2011US41188
申请日期
2011.06.21
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;KIMERLING, LIONEL, C.;LIU, JIFENG;MICHEL, JURGEN