LIGHT-EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD FOR SAME

摘要

Disclosed is a light-emitting display device that uses side contact structures in order to maintain TFT characteristics (ON current) of a linear region and wherein: a TFT that makes up a switching transistor has a thicker semiconductor layer (channel layer) in a region corresponding to source/drain electrodes, in order to reduce an OFF current; and a TFT that makes up a driver transistor has a thinner semiconductor layer (channel layer) in the region corresponding to source/drain electrodes, in order to carry the ON current. These structures are manufactured using a half-tone mask. This enables the OFF current to be suppressed in the switching transistor and the ON current to be maintained in the drive transistor.