ELECTRON BEAM EXCITED LIGHT-EMITTING DEVICE

摘要

There has been a problem that if an insulating film or the like is disposed to improve the characteristics of a conventional electron beam excited semiconductor laser or LED device, the characteristics of the device are degraded because charge-up caused by an electron beam occurs. In a semiconductor laser comprising nitride semiconductor layers (2, 3, 4, 5) formed on a sapphire substrate, an insulating film (6) and a metal film (7) are stacked and provided beside a ridge stripe structure (5). The metal film (7) is connected to a power supply (13), the voltage of which is set to greater than an accelerating voltage of -Vd and less than or equal to the ground voltage of 0V. Upper and lower n-clad layers (2, 4) are connected through electrodes (8, 9) to the ground.