发明名称 |
THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME |
摘要 |
Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.
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申请公布号 |
US2011316063(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US20100825211 |
申请日期 |
2010.06.28 |
申请人 |
TANG SANH D.;ZAHURAK JOHN K. |
发明人 |
TANG SANH D.;ZAHURAK JOHN K. |
分类号 |
H01L29/78;H01L21/82 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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