发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A shape of an upper edge of a trench is realized as an upwardly-open tapered surface T2, thereby reducing contact resistance without involvement of an increase in pitch for trench formation. Specifically, the trench has the tapered surface along the edge of an opening. A contact surface between a source region and a source electrode filled on the tapered surface makes up a source-contact region.
申请公布号 US2011316074(A1) 申请公布日期 2011.12.29
申请号 US201113168562 申请日期 2011.06.24
申请人 OOTA TOMONARI 发明人 OOTA TOMONARI
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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