METHOD FOR FORMING WIRING STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

摘要

Disclosed is a method for forming a wiring structure, which comprises: a step in which an opening is formed in an insulating film by dry etching wherein an etching gas containing fluorine is used; a cleaning step in which the bottom surface and the lateral surface of the opening are cleaned by being exposed to superheated steam; a step in which the bottom surface and the lateral surface of the opening are covered with a barrier metal film; a step in which a conductive film is deposited on the insulating film, so that the opening is filled with the conductive film with the barrier metal film being interposed therebetween; and a step in which the conductive film and the barrier metal film therebelow are polished by a chemical mechanical polishing method until the surface of the insulating film is exposed, so that a wiring pattern is formed of the conductive film in the opening.