| 发明名称 |
CMP OF COPPER/RUTHENIUM/TANTALUM SUBSTRATES |
| 摘要 |
<p>The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises an abrasive, an oxidizing agent, an amphiphilic nonionic surfactant, calcium ion or magnesium ion, a corrosion inhibitor for copper, and water, wherein the pH of the polishing composition is 6 to 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.No Figure</p> |
| 申请公布号 |
SG176441(A1) |
申请公布日期 |
2011.12.29 |
| 申请号 |
SG20110080306 |
申请日期 |
2007.11.01 |
| 申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
BRUSIC, VLASTA;ZHOU, RENJIE;THOMPSON, CHRISTOPHER;FEENEY, PAUL |
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