发明名称 |
Semiconductor Device and Manufacturing Method Thereof |
摘要 |
The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations for shielding TFTs, a high pixel aperture ratio is realized by forming a color filter (red, or lamination of red and blue), formed on an opposing substrate.
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申请公布号 |
US2011317108(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113225634 |
申请日期 |
2011.09.06 |
申请人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN |
分类号 |
G02F1/1335;G02F1/1362;H01L21/336;H01L21/77;H01L27/12;H01L27/13;H01L29/786 |
主分类号 |
G02F1/1335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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