发明名称 Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof
摘要 A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The features of such an approach enables a robust and reliable coaxial plasma capability in which the plasma jet is coaxial with the vapor plume, rather than the orthogonal configuration creating the previous disadvantages. In this way, the previous deformation of the vapor gas jet by the work gas stream of the hollow cathode pipe can be avoided and the carrier gas consumption needed for shaping the vapor plume can be significantly decreased.
申请公布号 US2011318498(A1) 申请公布日期 2011.12.29
申请号 US201013202828 申请日期 2010.02.24
申请人 WADLEY HAYDN N.G.;MATTAUSCH GOESTA;MORGNER HENRY;ROEGNER FRANK-HOLM;UNIVERSITY OF VIRGINIA PATENT FOUNDATION 发明人 WADLEY HAYDN N.G.;MATTAUSCH GOESTA;MORGNER HENRY;ROEGNER FRANK-HOLM
分类号 C23C16/50;C23C16/48;C23C16/503;C23C16/515;C23C16/52 主分类号 C23C16/50
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