| 摘要 |
<p>The present invention comprises: a gas for plasma reactions that is characterized by containing 1,1,2,4,4,-pentafluoro-1,3-butadiene; a dry etching method in which the gas for plasma reactions is supplied to a processing vessel, and in that vessel a substrate to be etched undergoes dry etching; and a film-forming method for forming a fluorocarbon film in which the gas for plasma reactions is supplied to a processing vessel, and in that vessel a fluorocarbon film is grown by CVD on the surface of an object to be processed. When using this gas for plasma reactions of the present invention, particulate impurities are unlikely to occur in the gas vessel or inside an apparatus in which gas is circulated, etc., (especially in joints of piping, etc.) The dry etching method of the present invention facilitates the formation of high-aspect-ratio contact holes of a finer radius, with favorable forms that are approximately vertical and have no necking. Moreover, the film-forming method using the gas for plasma reactions of the present invention makes it possible to stably form fluorocarbon films with a high degree of repeatability.</p> |
