发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and formed on a supporting substrate, a carrier supplying layer made of a group-III nitride semiconductor and formed on the carrier traveling layer, source and drain electrodes formed on the carrier supplying layer, insulating films formed on the carrier supplying layer and a gate electrode formed on the insulating films. The insulating film is formed in a region interposed between the source and drain electrodes and has a trench whose cross-section is inverted trapezoidal and whose upper opening is wider than a bottom thereof. The gate electrode is formed at least from the bottom of the trench onto the insulating films on the side of the drain electrode.
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申请公布号 |
US2011316048(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113225299 |
申请日期 |
2011.09.02 |
申请人 |
FURUKAWA ELECTRIC CO., LTD. |
发明人 |
IKEDA NARIAKI;KAYA SHUSUKE |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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