SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF

摘要

A semiconductor structure and a fabricating method thereof are provided. The semiconductor structure comprises: a semiconductor substrate (1000); a channel region formed in the semiconductor substrate (1000); a gate stacking structure formed on the channel region; and source/drain regions (1005) formed in the semiconductor substrate (1000) and positioned at each side of the channel region. The gate stacking structure comprises a gate dielectric layer formed on the channel region and an electric conductive layer formed on the gate dielectric layer. The electric conductive layer has compressive stress for NMOSFET (101), such that tensile stress is applied to the channel region; and the electric conductive layer has tensile stress for PMOSFET (102), such that compressive stress is applied to the channel region.