发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 In addition to a memory macro region and functional circuit regions on a substrate, a semiconductor integrated circuit device includes a dummy pattern region 40 arranged between the functional circuit regions and between the memory macro region 10 and the functional circuit regions and including a dummy pattern. The dummy pattern has a pattern identical to that of diffusion layers and gate electrodes of a memory cell pattern in a memory cell array region. An area ratio of dummy diffusion layer(s) and dummy gate electrode(s) in the dummy pattern region is equal to or greater than that of the diffusion layers and the gate electrode(s) in the memory cell array region.
申请公布号 US2011316052(A1) 申请公布日期 2011.12.29
申请号 US201113150842 申请日期 2011.06.01
申请人 FURUTA HIROSHI;KOBAYASHI TAKAAKI;AZUHATA HIROFUMI;MORITA TOMOYA;OKAMURA RYUICHI;TAKAHASHI TOSHIFUMI;RENESAS ELECTRONICS CORPORATION 发明人 FURUTA HIROSHI;KOBAYASHI TAKAAKI;AZUHATA HIROFUMI;MORITA TOMOYA;OKAMURA RYUICHI;TAKAHASHI TOSHIFUMI
分类号 H01L27/088 主分类号 H01L27/088
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